Origin of the D peak in the Raman spectrum of microcrystalline graphite

被引:331
作者
Pocsik, I
Hundhausen, M
Koos, M
Ley, L
机构
[1] Hungarian Acad Sci, Solid State Phys Res Inst, H-1525 Budapest, Hungary
[2] Univ Erlangen Nurnberg, Inst Tech Phys, D-91058 Erlangen, Germany
关键词
D peak; Raman spectrum; microcrystalline graphite;
D O I
10.1016/S0022-3093(98)00349-4
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have studied the D peak in the Raman spectrum of polycrystalline graphite as a function of excitation energy in the range from 1.16 to 4.3 eV. The D peak disperses with excitation energy (approximate to 50 cm(-1)/eV and its intensity decreases with increasing laser energy. The dispersion of the D peak is explained in terms of a novel (k) over right arrow-selective resonant Raman scattering process. The scattering cross-section is resonantly enhanced for phonons on one branch in the phonon dispersion curves which have the same (k) over right arrow-vector as the electronic transition responsible for the resonance. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1083 / 1086
页数:4
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