Electrical characterization of charges in irradiated oxides by electrostatic force microscopy and Kelvin method

被引：7

作者：

Dongmo, H

Carlotti, JF

Bruguier, G

Guasch, C

Bonnet, J

Gasiot, J

机构：

[1] Univ Montpellier 2, LAIN, F-34095 Montpellier 5, France

[2] Univ Montpellier 2, CEM2, Montpellier, France

来源：

APPLIED SURFACE SCIENCE | 2003年 / 212卷

关键词：

ion irradiation; thin film SiO2; trapped charge; near-field scanning microscopy; Kelvin probe;

D O I：

10.1016/S0169-4332(03)00134-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We studied electrical effects observed on irradiated surfaces Of SiO2/Si at macroscopic and nanoscopic scales. Irradiation is performed using high energy and low-density ion beams. Macroscopic measurements are obtained using vibrating capacitor with probe diameter of 1 mm. Nanoscopic properties (both morphology and electrical effects) are measured using electrostatic force and nanoKelvin microscopy working in vacuum. We show mappings of electrical effects and discuss about the criteria allowing to separate potential effects from trapped electrical charge effects. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：607 / 613

页数：7