Monolithic integration in InGaAs-InGaAsP multiquantum-well structure using laser processing

被引：17

作者：

Qiu, BC ^{[1
]}

Bryce, AC ^{[1
]}

De La Rue, RM ^{[1
]}

Marsh, JH ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8QQ, Lanark, Scotland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

indium gallium arsenide phosphide (InGaAsP); indium phosphide (InP); integrated optoelectronics; laser processing; quantum-well intermixing; quantum wells; semiconductor lasers;

D O I：

10.1109/68.681478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the use of a laser irradiation process, which combines irradiation by continuous wave and Q-switched pulsed Nd:YAG lasers, to promote quantum-well intermixing. Differential shifts up to 70 meV have been obtained in GaInAsP structures. Extended cavity-ridge lasers with 800-mu m-long active sections and 1000-mu m-long passive sections, were fabricated. The slope efficiency of the extended cavity lasers is very close to that of 800-mu m-long all-active lasers, and the threshold current is 10 mA higher than for an 800-mu m-long all-active device. The loss in the intermixed single-mode waveguide is 2.1 cm(-1).

引用

页码：769 / 771

页数：3

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