Thermally activated ferroelectric domain growth due to random defects

被引：34

作者：

Likodimos, V

Labardi, M

Orlik, XK

Pardi, L

Allegrini, M

Emonin, S

Marti, O

机构：

[1] Univ Pisa, INFM, I-56127 Pisa, Italy

[2] Univ Pisa, Dipartimento Fis, I-56127 Pisa, Italy

[3] Univ Ulm, Expt Phys Abt, D-89069 Ulm, Germany

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.63.064104

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ferroelectric domain kinetics on cleaved triglycine sulfate, quenched at different temperatures in the ferroelectric phase, is investigated in situ by scanning force microscopy in the dynamic contact mode. Thermally activated domain growth and dynamic scaling, in accordance with theoretical predictions for quenched disorder due to random-bond defects, is inferred from the temporal evolution of the spatial correlation functions and the related characteristic length scale.

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页数：4

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