All-organic thin-film transistors made of poly(3-butylthiophene) semiconducting and various polymeric insulating layers

被引：86

作者：

Parashkov, R ^{[1
]}

Becker, E ^{[1
]}

Ginev, G ^{[1
]}

Riedl, T ^{[1
]}

Johannes, HH ^{[1
]}

Kowalsky, W ^{[1
]}

机构：

[1] Tech Univ Braunschweig, Inst Hochfrequenztech, D-38092 Braunschweig, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 03期

关键词：

D O I：

10.1063/1.1636524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated fully patterned all-organic thin-film transistors with a variety of organic polymer insulators. Poly(3-butylthiophene) deposited by spin coating was used as the active organic layer. We have built top-gate structures with gates printed on top of the gate dielectric layer. The field enhanced current is weak with poly(4-vinyl phenol), but much stronger with polyvinyl alcohol and cyanoethylpullulan. Carrier mobilities as large as 0.04 cm(2)/V s were measured in the case of cyanoethylpullulan. A strong correlation is found between the solvents used for the dielectrics, dielectric constant of the insulator, and the field-effect mobility. (C) 2004 American Institute of Physics.

引用

页码：1594 / 1596

页数：3

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