10 W continuous-wave Nd:GdVO4 microchip laser

被引：24

作者：

Liao, M. ^{[1
]}

Lan, R. ^{[1
,2
]}

Wang, Z. ^{[1
]}

Zhang, H. ^{[1
]}

Wang, J. ^{[1
]}

Hou, X. ^{[2
]}

Xu, X. ^{[1
]}

机构：

[1] Shandong Univ, Natl Key Lab Crystal Mat, Jinan 250100, Peoples R China

[2] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China

来源：

LASER PHYSICS LETTERS | 2008年 / 5卷 / 07期

关键词：

Nd : GdVO4; microchip lasers;

D O I：

10.1002/lapl.200810016

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this letter we reported a LD end-pumped high power Nd:GdVO4 Microchip laser. With a 0.5 at.%, 1.5 mm, T = 1% Nd:GdVO4 crystal, 10.1 W maximum output was achieved, corresponding an optical-optical conversion efficiency of 42.3%. The pump threshold was as low as 0.21 W.

引用

页码：503 / 505

页数：3

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