Deep level defect luminescence in cadmium selenide nano-crystals films

被引：43

作者：

Babentsov, V ^{[1
]}

Riegler, J ^{[1
]}

Schneider, J ^{[1
]}

Ehlert, O ^{[1
]}

Nann, T ^{[1
]}

Fiederle, M ^{[1
]}

机构：

[1] Freiburg Mat Res Ctr, D-79104 Freiberg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 280卷 / 3-4期

关键词：

characterization; defects; nanostructures; growth from vapour; cadmium compounds;

D O I：

10.1016/j.jcrysgro.2005.03.086

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Undoped CdSe monocrystals and CdSe nano-crystals films have been studied at various temperatures by continuous wave (cw) photoluminescence. We report on a characteristic deep level emission, which is consistently observed in the wurtzite bulk- and nanocrystalline forms of CdSe. Two broad luminescence bands, which are separated from the excitonic emission by 0.5 and 0.7eV occur in CdSe, prepared by quite different techniques. These bands experience, similar to the excitonic emission, a spectral shift to high energy enforced by the quantum confinement in nano-CdSe. The defects responsible for this luminescence are probably two different V-Cd-V-Se, divacancies: one is oriented along the hexagonal c-axis, the other is oriented along the basal Cd-Se bond directions. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：502 / 508

页数：7

共 14 条

[1] Electronic structure and hyperfine interactions for deep donors and vacancies in II-VI compound semiconductors [J].