Growth of high quality silicon carbide films by bias enhanced low-pressure HFCVD using methane

被引：8

作者：

George, VC

Das, A

Roy, M

Dua, AK ^{[1
]}

Raj, P

Zahn, DRT

机构：

[1] Bhabha Atom Res Ctr, Novel Mat & Struct Chem Div, Bombay 400085, Maharashtra, India

[2] TU Chemnitz, Inst Phys, Chemnitz, Germany

来源：

APPLIED SURFACE SCIENCE | 2003年 / 212卷

关键词：

oriented beta-SiC films; bias enhanced LP-HFCVD; substrate orientation; bias effects;

D O I：

10.1016/S0169-4332(03)00070-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Highly oriented, beta-SiC films have been grown on Si substrates by a bias enhanced low-pressure hot filament chemical vapour deposition (LP-HFCVD) technique. The films have been characterised using X-ray diffraction (XRD), atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The application of bias to the substrate is found to induce crystallinity, increase particle size as well as the roughness of the deposit on the Si surfaces. The orientation of the film is found to depend on the orientation of the substrate. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：287 / 290

页数：4

共 16 条

[1] Behavior of oxygen doped SiC thin films:: An x-ray photoelectron spectroscopy study [J].