High-temperature single-hole silicon transistors

被引：16

作者：

Bagraev, NT

Klyachkin, LE

Malyarenko, AM

Gehlhoff, W

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Tech Univ Berlin, Arbeitsgrp EPR, Inst Festkorperphys, D-12489 Berlin, Germany

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1998年 / 23卷 / 06期

关键词：

quantum dot; single-hole tunneling; transistor;

D O I：

10.1006/spmi.1996.0360

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present high-temperature (77 K, 300 K) single-hole n(+)-p(+)-n transistors based on silicon diffusion nanostructures. This is made possible by utilizing a quantum wire with isolated quantum dots, which is naturally formed inside an ultrashallow p(+)-diffusion profile using nonequilibrium diffusion processes. (C) 1998 Academic Press Limited.

引用

页码：1333 / 1338

页数：6