Stress distribution and curvature in graded semiconductor layers

被引：25

作者：

Hsueh, CH ^{[1
]}

机构：

[1] Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 258卷 / 3-4期

关键词：

modeling; stresses; graded layers; semiconducting gallium arsenide;

D O I：

10.1016/S0022-0248(03)01563-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The elastic stress distribution resulting from both lattice mismatch and thermal mismatch in a film/graded layer/substrate system is considered. Both numerical and analytical models have been developed previously to analyze this problem. An alternative analytical model is developed in the present study to derive the exact closed-form solution. Specific results are calculated for the GaAs/graded GaAs-Si/Si systems. The present results agree With existing numerical and analytical results. The difference between the present analytical model and existing analytical models. is discussed. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：302 / 309

页数：8

共 28 条

[1] An approximate method for residual stress calculation in functionally graded materials [J].

Becker, TL ;

Cannon, RM ;

Ritchie, RO .

MECHANICS OF MATERIALS, 2000, 32 (02) :85-97

[2] Averaging and finite-element discretization approaches in the numerical analysis of functionally graded materials [J].

Cho, JR ;

Ha, DY .

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2001, 302 (02) :187-196

[3]

ESHELBY JD, P ROY SOC LONDON A, V252, P376

[4]

FENG ZC, 1983, J APPL PHYS, V54, P83, DOI 10.1063/1.331690

[5] Some elementary connections between curvature and mismatch strain in compositionally graded thin films [J].

Freund, LB .

JOURNAL OF THE MECHANICS AND PHYSICS OF SOLIDS, 1996, 44 (05) :723-736

[6] THE STRESS-DISTRIBUTION AND CURVATURE OF A GENERAL COMPOSITIONALLY GRADED SEMICONDUCTOR LAYER [J].

FREUND, LB .

JOURNAL OF CRYSTAL GROWTH, 1993, 132 (1-2) :341-344

[7] Very high electron mobilities at low temperatures in InxGa1-xAs/InyAl1-yAs HEMTs grown lattice-mismatched on GaAs substrates [J].

Gozu, S ;

Tsuboki, K ;

Hayashi, M ;

Hong, CL ;

Yamada, S .

JOURNAL OF CRYSTAL GROWTH, 1999, 201 :749-752

[8] An alternative method of solving multilayer bending problems [J].

Hsueh, CH ;

Lee, S ;

Chuang, TJ .

JOURNAL OF APPLIED MECHANICS-TRANSACTIONS OF THE ASME, 2003, 70 (01) :151-154

[9] RESIDUAL-STRESSES IN METAL CERAMIC BONDED STRIPS [J].

HSUEH, CH ;

EVANS, AG .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1985, 68 (05) :241-248

[10] Thermal stresses in elastic multilayer systems [J].

Hsueh, CH .

THIN SOLID FILMS, 2002, 418 (02) :182-188

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