X-ray absorption fine structure of ion-implanted Hg0.79Cd0.21Te semiconductors

被引:5
作者
Indrea, E [1 ]
Jaouen, M [1 ]
Chartier, P [1 ]
机构
[1] FAC SCI POITIERS,MET PHYS LAB,CNRS,URA 131,F-86022 POITIERS,FRANCE
关键词
D O I
10.1088/0268-1242/12/1/008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The local environments around mercury atoms in the narrow-bandgap Hg0.79Cd0.21Te semiconductor alloys have been deduced from extended x-ray absorption fine-structure (EXAFS) analysis. A nonlinear least-squares fitting was applied in order to determine the coordination number, the bond distances and the Debye-Waller factors for the nearest and the next-nearest neighbours around the Hg atom. While ordering has been found for the first coordination shell which consists of four tetrahedrally coordinated Te atoms at 0.280 nm, the next-neighbour shell (consisting of 12 cations) is split into two peaks at the bond lengths of 0.454 nm for HS-Cd and 0.459 nm for Hg-Hg. Local structure parameters for Kr- and Xe-ion-implanted Hg0.79Cd0.21Te crystals are also analysed.
引用
收藏
页码:42 / 46
页数:5
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