Impact of source inductance on synchronous buck regulator FET shoot through performance

被引：21

作者：

Black, Arthur G. ^{[1
]}

机构：

[1] Fairchild Semicond, San Jose, CA 95034 USA

来源：

2007 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-6 | 2007年

关键词：

D O I：

10.1109/PESC.2007.4342122

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

Shoot through is a common design consideration for the synchronous buck regulator. Several papers have been published that show how shoot through is influenced by FET silicon parameters such as R-G or C-GD/(C-GD+C-GS) [1], [2]. But only limited work has been done on the influence of source inductance on shoot through. In this paper, we will present a detailed analysis of how source inductance impacts shoot through.

引用

页码：981 / 986

页数：6