Room-temperature electric-field controlled spin dynamics in (110)InAs quantum wells -: art. no. 202114

被引：31

作者：

Hall, KC ^{[1
]}

Gündogdu, K

Hicks, JL

Kocbay, AN

Flatté, ME

Boggess, TF

Holabird, K

Hunter, A

Chow, DH

Zinck, JJ

机构：

[1] Dalhousie Univ, Dept Phys & Atmospher Sci, Halifax, NS B3H 3J5, Canada

[2] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA

[3] Univ Iowa, Opt Sci & Technol Ctr, Iowa City, IA 52242 USA

[4] HRL Labs, LLC, Malibu, CA 90265 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 20期

基金：

美国国家科学基金会; 加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1063/1.1929082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the demonstration of room temperature gate control over the electron spin dynamics using the Rashba effect in a (110) InAs/AlSb two-dimensional electron gas. Our calculations predict that the strong spin-orbit interaction in this system produces pseudomagnetic fields exceeding 1 T when only 140 mV is applied across a single quantum well. Using this large pseudomagnetic field, we demonstrate low-power spin manipulation on a picosecond time scale. Our findings are promising for the prospect of nonmagnetic low-power, high-speed spintronics. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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