Temperature dispersion of refractive indices in semiconductors

被引：22

作者：

Ghosh, G ^{[1
]}

机构：

[1] UNIV SYDNEY,SCH PHYS,DEPT PHYS OPT,SYDNEY,NSW 2006,AUSTRALIA

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 12期

关键词：

D O I：

10.1063/1.362572

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The variations of refractive index with temperature, i.e., the thermo-optic coefficients (dn/dT), are analyzed critically by use of a physical model for some important semiconductors to find the refractive index at any operating temperature for any wavelength throughout the transmission region. This model is based on three physical parameters-the thermal-expansion coefficient and two optical band gaps, such as excitonic and isentropic that are lying in the UV region, instead of considering any empirical equations. (C) 1996 American Institute of Physics.

引用

页码：9388 / 9389

页数：2

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