High-κ and metal-gate pMOSFETs on GeOI obtained by Ge enrichment:: Analysis of ON and OFF performances

被引：20

作者：

Le Royer, C. ^{[1
]}

Vincent, B. ^{[1
]}

Clavelier, L. ^{[1
]}

Damlencourt, J. -F. ^{[1
]}

Tabone, C. ^{[1
]}

Batude, P. ^{[1
]}

Blachier, D. ^{[1
]}

Truche, R. ^{[1
]}

Campidelli, Y. ^{[3
]}

Nguyen, Q. T. ^{[2
]}

Cristoloveanu, S. ^{[2
]}

Soliveres, S. ^{[1
]}

Le Carval, G. ^{[1
]}

Boulanger, F. ^{[1
]}

Billon, T. ^{[1
]}

Bensahel, D. ^{[3
]}

Deleonibus, S. ^{[1
]}

机构：

[1] French Atom Energy Comm CEA LETI Minatec, Elect & Informat Technol Lab, F-38054 Grenoble, France

[2] IMEP Minatec, F-38016 Grenoble, France

[3] STMicroelect, F-38926 Crolles, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 06期

关键词：

germanium (Ge); hafnium oxide; high-kappa dielectric; MOSFET;

D O I：

10.1109/LED.2008.923539

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, we report high-kappa/metal-gate pMOSFETs fabricated on high-quality 200-mm germanium-on-insulator (GeOI) wafers obtained by the Ge enrichment technique. The highest mobility peak (200 cm(2)/V.s) and driving current (I-ON = 115 mu A/mu m at V-G - V-th = -0.8 V and V-DS = -1.2 V, for L = 0.5 mu m) have been demonstrated for GeOI HfO2/TiN pMOSFETs on Ge layers as thin as 50 nm. As compared to silicon-on-insulator control devices, 2 x enhancement of peak mobility has been achieved. Due to temperature variation experiments and technology computer-aided design simulations, we have investigated the key physical phenomena responsible for the measured OFF currents (band-to-hand tunneling at high V-DS and generation-recombination via the Shockley-Read-Hall process at low V-DS).

引用

页码：635 / 637

页数：3

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