Surface and sensing properties of PE-ALD SnO2 thin film

被引：8

作者：

Lee, W ^{[1
]}

Hong, K

Park, Y

Kim, NH

Choi, Y

Park, J

机构：

[1] Chonnam Natl Univ, Dept Chem, Kwangju 500757, South Korea

[2] Chosun Univ, Dept Phys, Kwangju 501759, South Korea

[3] Chosun Univ, Dept Adv Mat Engn, Kwangju 501759, South Korea

[4] Chosun Univ, Res Inst Energy Resources Technol, Kwangju 501759, South Korea

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 08期

关键词：

D O I：

10.1049/el:20058174

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SnO2 thin films have been deposited by plasma enhanced-atomic layer deposition (PE-ALD) on Si (100) substrate. The dominant oxygen species for post-annealing films were O-2, O2- and O- for 100, 200 and 400 cycles, respectively. The film for 200 cycles has a good CO sensing property at the highest concentration of O-2(-) Species.

引用

页码：475 / 477

页数：3

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