Stability of advanced photoresist systems for subquarter micrometer lithography during reactive ion etch processes

被引：1

作者：

Naeem, MD ^{[1
]}

Yan, W

Zhu, J

机构：

[1] IBM Microelect Div, DRAM Dev Alliance Semicond Res & Dev Ctr, Dry Etch, Hopewell Junction, NY 12533 USA

[2] IBM Microelect Div, DRAM Dev Alliance Semicond Res & Dev Ctr, Lithog Dept, Hopewell Junction, NY 12533 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2001年 / 148卷 / 03期

关键词：

D O I：

10.1149/1.1346621

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The deep ultraviolet (DUV) photoresist systems are essential for phololithography to produce subquarter micrometer patterns in semiconductor fabrications. Such photoresist systems are not very stable when subjected to low energy ion bombardment during reactive ion etching (RIE) processes. The surface morphology of a DW photoresist changes in a RIE process leading to microfissures and this produces poor quality serrated images. Factors such as monomeric structure of the photoresist, postdevelop treatments, and plasma processing conditions affecting the stability of photoresist systems are investigated. (C) 2001 The Electrochemical Society. All rights reserved.

引用

页码：G137 / G140

页数：4

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