The robustness of series-connected high power IGBT modules

被引：3

作者：

Abbate, C.

Busatto, G.

Fratelli, L.

Iannuzzo, F.

Cascone, B.

Manzo, R.

机构：

[1] Univ Cassino, Dept Automat Electromagnetism Informat Engn & Ind, I-03043 Cassino, Italy

[2] Ansaldo Breda Spa, I-80147 Naples, Italy

来源：

MICROELECTRONICS RELIABILITY | 2007年 / 47卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2007.07.036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The behaviour in terms of robustness of series-connected high power IGBT modules is presented, arranged in a topology which ensures voltage balance on IGBT's and diodes by means of a simple auxiliary circuit applied directly on the high power devices, which are used in hard switching mode. Analyses in terms of IGBT and diode SOA (safe operating area), collector to emitter voltage gradient and short circuit condition are reported as well as an extended experimental characterisation. Both analyses confirm superior switching rating and system reliability, by using two series-connected IGBT in substitution of a single module, same current and double voltage rated. Moreover, thanks the auxiliary circuit presence, the robustness of total system is maintained also in extreme operating conditions (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：1746 / 1750

页数：5