Microstructure and electric properties of a SnO2 based varistor

被引:89
作者
Pianaro, SA [1 ]
Bueno, PR
Longo, E
Varela, JA
机构
[1] UEPG, Dept Mat Engn, BR-84031510 Ponta Grossa, PR, Brazil
[2] Univ Fed Sao Carlos, Dept Quim, BR-13565905 Sao Carlos, SP, Brazil
[3] Univ Estadual Paulista, Inst Quim, BR-14801970 Araraquara, SP, Brazil
关键词
D O I
10.1016/S0272-8842(97)00076-X
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
High non-linear J x E electrical characteristic (alpha=41) were obtained in the Nb2O5 and Cr2O3 doped CoO highly densified SnO2 ceramics. X-ray diffraction analysis showed that these ceramics are apparently single phase. Electrical properties and microstructure are highly dependent on the Cr2O3 concentration and on the sintering temperature. Excess of Cr2O3 leads to porous ceramics destroying the material's electrical characteristics probably due to precipitation of second phase of CoCr2O4 Dopant segregation and/or solid solution formation at the grain boundaries can be responsible for the formation of the electrical barriers which originate the varistor behaviour. (C) 1998 Elsevier Science Limited and Techna S.r.l. All rights reserved.
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页码:1 / 6
页数:6
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