Electrooptic wafer beam deflector in LiTaO3

被引：21

作者：

Li, J ^{[1
]}

Cheng, HC ^{[1
]}

Kawas, MJ ^{[1
]}

Lambeth, DN ^{[1
]}

Schlesinger, TE ^{[1
]}

Stancil, DD ^{[1
]}

机构：

[1] ETEK DYNAM INC,SAN JOSE,CA 95131

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/68.541558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel electrooptic beam deflector is reported based on ferroelectric domain inversion extending through the thickness of a Z-cut LiTaO3 wafer. The selective domain inversion is achieved by electric field poling assisted by proton exchange, rather than proton exchange followed by rapid thermal annealing. The deflection sensitivity of the device was measured to be 5.0 mrad/KV. This is 93% of the theoretical value for this geometry, and a significant improvement over the value of 80% of theoretical previously reported for a waveguide deflector. This improvement is attributed to the new domain inversion process. No degradation of deflection sensitivity is observed up to the frequency of 300 KHz, which is then limited by the response time of detectors.

引用

页码：1486 / 1488

页数：3

共 9 条

[1]

Baron C, 1996, APPL PHYS LETT, V68, P481, DOI 10.1063/1.116420

[2] GUIDED-WAVE ELECTROOPTIC BEAM DEFLECTOR USING DOMAIN REVERSAL IN LITAO3 [J].