New transparent conductive films: FTO coated ITO

被引:101
作者
Kawashima, T [1 ]
Matsui, H [1 ]
Tanabe, N [1 ]
机构
[1] Fujikura Ltd, Mat Technol Lab, Elect Mat Dept, Koto Ku, Tokyo 1358512, Japan
关键词
indium-tin-oxide; fluorine doped tin oxide; spray pyrolysis deposition; resistivity;
D O I
10.1016/S0040-6090(03)01169-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
New transparent conductive films, fluorine doped tin oxide (FTO) films coated on indium-tin-oxide (ITO) films, were developed. These transparent conductive films were prepared by the spray pyrolysis deposition method at a substrate temperature of 350 degreesC in ITO and 400 degreesC in FrO. For ITO deposition, an ethanol solution of indium(III) chloride, InCl3.4H(2)O, and tin(II) chloride, SnCl2.2H(2)O [Sn/(In+Sn), 5 at.%] was sprayed on a Coming #7059 glass substrate (100X100X1.1 mm(3)). After the deposition, FTO films were consecutively deposited for protecting oxidation of ITO films. FTO deposition was carried out by an ethanol solution of tin(IV) chloride, SnCl4.5H(2)O within the saturated water solution of NH4F. These new transparent conductive films achieved the lowest resistivity of 1.4 X 10(-4) Omega cm and the optical transmittance of more than 80% in the visible range of the spectrum. The electrical resistance of these new transparent conductive films increased by less than 10% even when exposed to high temperatures of 300-600 degreesC for 1 h in the air. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:241 / 244
页数:4
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