Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 mu m grown by metal-organic chemical vapor deposition

A compressively strained InAsSb/InAs multiple quantum-well (MQW) structure was grown by low-pressure metal-organic chemical vapor deposition. Maximum output power (from two facets) up to 1 W with differential efficiency about 70% was obtained from a MQW laser with stripe width of 100 mu m and cavity length of 700 mu m for emitting wavelength of 3.65 mu m at 90 K in pulse mode operation. About 2 times lower threshold current density was obtained from the MQW lasers for a temperature range of 90 to 140 K compared to the double heterostructure lasers grown on the same growth conditions. (C) 1997 American Institute of Physics.