Triple-junction GaInP/GaAs/Ge solar cells - Production status, qualification results and operational benefits

被引：11

作者：

Granata, JE ^{[1
]}

Ermer, JH ^{[1
]}

Hebert, P ^{[1
]}

Haddad, M ^{[1
]}

King, RR ^{[1
]}

Krut, DD ^{[1
]}

Lovelady, J ^{[1
]}

Gillanders, MS ^{[1
]}

Karam, NH ^{[1
]}

Cavicchi, BT ^{[1
]}

机构：

[1] Spectrolab Inc, Sylmar, CA 91342 USA

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.916099

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In 1999 Spectrolab completed design and qualification; and began production on the next generation of multijunction solar cell - a triple-junction GaInP/GaAS/Ge. With over 20% AM0 conversion efficiency at an operating temperature of 60 degreesC, this cell provides 8-11% more power than competing dual-junction designs in GEO orbit after 15 years (6x10(14) 1-MeV electron equivalence). Spectrolab is currently qualifying an improved triple-junction cell capable of delivering over 22% AM0 conversion efficiency under these same conditions, with a beginning-of-life operating efficiency of 27%.

引用

页码：1181 / 1184

页数：4