VHF, UHF and microwave frequency nanomechanical resonators

被引:100
作者
Huang, XMH
Feng, XL
Zorman, CA
Mehregany, M
Roukes, ML
机构
[1] CALTECH, Div Engn & Appl Sci, Kavli Nanosci Inst, Pasadena, CA 91125 USA
[2] Case Western Reserve Univ, Dept Elect Engn & Comp Sci, Cleveland, OH 44106 USA
来源
NEW JOURNAL OF PHYSICS | 2005年 / 7卷
关键词
D O I
10.1088/1367-2630/7/1/247
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Nanomechanical resonators with fundamental mode resonance frequencies in the very-high frequency (VHF), ultra-high frequency (UHF) and microwave L-band ranges are fabricated from monocystalline silicon carbide (SiC) thin film material, and measured by magnetomotive transduction, combined with a balanced-bridge readout circuit. For resonators made from the same film, we measured the frequency dependence (thus geometry dependence) of the quality factor. We have seen a steady decrease of quality factor as the frequency goes up. This indicates the importance of clamping losses in this regime. To study this source of dissipation, a free-free beam SiC nanomechanical resonator has been co-fabricated on the same chip with a doubly clamped beam resonator operating at similar frequencies. Device testing has been performed to directly compare their characteristics and performance. It is observed that a significant improvement in quality factor is attained from the free-free beam design. In addition, from studies of resonators made from different chips with varying surface roughness, we found a strong correlation between surface roughness of the SiC thin film material and the quality factor of the resonators made from it. Furthermore, we experimentally studied the eddy current damping effect in the context of magnetomotive transduction. A high-aspect ratio SiC nanowire resonator is fabricated and tested for this study. Understanding the dissipation mechanisms, and thus improving the quality factor of these resonators, is important for implementing applications promised by these devices.
引用
收藏
页数:15
相关论文
共 19 条
[1]   Measurement of mechanical resonance and losses in nanometer scale silicon wires [J].
Carr, DW ;
Evoy, S ;
Sekaric, L ;
Craighead, HG ;
Parpia, JM .
APPLIED PHYSICS LETTERS, 1999, 75 (07) :920-922
[2]   Fabrication of high frequency nanometer scale mechanical resonators from bulk Si crystals [J].
Cleland, AN ;
Roukes, ML .
APPLIED PHYSICS LETTERS, 1996, 69 (18) :2653-2655
[3]   A nanometre-scale mechanical electrometer [J].
Cleland, AN ;
Roukes, ML .
NATURE, 1998, 392 (6672) :160-162
[4]   External control of dissipation in a nanometer-scale radiofrequency mechanical resonator [J].
Cleland, AN ;
Roukes, ML .
SENSORS AND ACTUATORS A-PHYSICAL, 1999, 72 (03) :256-261
[5]   Elastic wave transmission at an abrupt junction in a thin plate with application to heat transport and vibrations in mesoscopic systems [J].
Cross, MC ;
Lifshitz, R .
PHYSICAL REVIEW B, 2001, 64 (08)
[6]   Balanced electronic detection of displacement in nanoelectromechanical systems [J].
Ekinci, KL ;
Yang, YT ;
Huang, XMH ;
Roukes, ML .
APPLIED PHYSICS LETTERS, 2002, 81 (12) :2253-2255
[7]   Surface roughness control of 3C-SiC films during the epitaxial growth process [J].
Fu, XA ;
Zorman, CA ;
Mehregany, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (12) :G910-G914
[8]  
HARRINGTON DA, 2003, THESIS CALTECH PASDE
[9]  
Hsu WT, 2001, TRANSDUCERS '01: EUROSENSORS XV, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, P1110
[10]   Nanodevice motion at microwave frequencies [J].
Huang, XMH ;
Zorman, CA ;
Mehregany, M ;
Roukes, ML .
NATURE, 2003, 421 (6922) :496-496