Light and voltage dependence of the junction transport properties of CdTe/CdS photovoltaics

被引：17

作者：

Linam, DL

Singh, VP

McClure, JC ^{[1
]}

Lush, GB

Mathew, X

Sebastian, PJ

机构：

[1] Univ Texas, Dept Elect & Comp Engn, El Paso, TX 79968 USA

[2] Univ Kentucky, Dept Elect Engn, Lexington, KY 40506 USA

[3] Univ Nacl Autonoma Mexico, Ctr Invest Energia, Temixco, Morelos, Mexico

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 70卷 / 03期

基金：

美国国家航空航天局;

关键词：

cadmium telluride; CdTe; solar cells; junctions; thin films; photovoltaics;

D O I：

10.1016/S0927-0248(01)00075-7

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The J-V curve of CdTe/CdS photovoltaics does not consist of a simple superposition of a loss current and a light generated current with a considerable loss in conversion efficiency. This paper uses capacitance/voltage measurements and J-V measurements at a variety of temperatures and light levels to develop a model for this non-superposition. It was found that a light dependent tunneling mechanism dominates at low voltages. Moreover, the tunneling takes place from a trap level within the CdTe. (C) 2001 Published by Elsevier Science B.V.

引用

页码：335 / 344

页数：10

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[3]

Chu T. L., 1993, Progress in Photovoltaics: Research and Applications, V1, P31, DOI 10.1002/pip.4670010105

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