Low noise broadband tellurite-based Er3+-doped fibre amplifiers

被引：80

作者：

Mori, A ^{[1
]}

Kobayashi, K ^{[1
]}

Yamada, M ^{[1
]}

Kanamori, T ^{[1
]}

Oikawa, K ^{[1
]}

Nishida, Y ^{[1
]}

Ohishi, Y ^{[1
]}

机构：

[1] NTT Corp, Optoelect Labs, Tokai, Ibaraki 3191193, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 09期

关键词：

D O I：

10.1049/el:19980674

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have succeeded in fabricating low-loss tellurite-based Er3+-doped fibre for low noise 1.5 mu m broadband EDFAs by developing high-purity TeO2 as a raw material. The background loss of the fibre is reduced to 0.054dB/m at 1200nm. A 20dB signal bandwidth of 83nm From 1528 to 1611 nm and a low flat noise figure of < 6.5dB from 1539 to 1624 nm can be obtained for a tellurite-based EDFA using the low-loss fibre.

引用

页码：887 / 888

页数：2

共 11 条

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