Interface ordering in Si-m/Ge-n monolayer superlattices: A photoluminescence study

被引：6

作者：

Casalboni, M

Pinto, N

Izzi, B

Davoli, I

DeCrescenzi, M

DeMatteis, F

Prosposito, P

Pizzoferrato, R

机构：

[1] UNIV CAMERINO,IST NAZL FIS MAT,I-62032 CAMERINO,ITALY

[2] UNIV ROMA TOR VERGATA,DIPARTIMENTO FIS,I-00133 ROME,ITALY

[3] UNIV ROMA TOR VERGATA,IST NAZL FIS MAT,I-00133 ROME,ITALY

[4] UNIV ROMA TOR VERGATA,DIPARTIMENTO INGN MECCAN,I-00133 ROME,ITALY

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.53.1030

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Alternate Si and Ge monolayers deposited by molecular-beam epitaxy on Si-0.7-Ge-0.3 alloy have been analyzed by means of photoluminescence spectroscopy. We measured well-resolved excitonic transitions located at 0.8 eV, far from the alloy emission with the same stoichiometric composition. We discuss this feature in terms of interface mixing producing an ordered alloy to accommodate the tetragonal strain in the Si-m/Ge-n monolayer superlattice with in and n<3.

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页码：1030 / 1033

页数：4

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