Deposition of dielectric PLT thin film by laser ablation

被引：4

作者：

Eun, DS ^{[1
]}

Park, JH ^{[1
]}

Lee, SY ^{[1
]}

Park, CY ^{[1
]}

机构：

[1] Yonsei Univ, Dept Elect Engn, Seoul 120749, South Korea

来源：

ALT '97 INTERNATIONAL CONFERENCE ON LASER SURFACE PROCESSING | 1998年 / 3404卷

关键词：

laser ablation; ferroelectric thin films; memory devices; DRAM; dielectric constant;

D O I：

10.1117/12.308597

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Lead-based ferroelectric thin films offer a wide variety of applications in dielectric, piezoelectric, pyroelectric, electro-optic, and memory devices. Among many applications, Pb-based thin films are suitable for increasing the integration of DRAM dine to high relative dielectric constant. Thin films of PLT(28) (Pb0.72La0.28Ti0.93O3) have been deposited cm Pt/Ti/SiO2/Si substrates in situ by a laser ablation. We have systematically investigated the effect of deposition temperatures on the crystal structures and square$)Cthe electrical property of the films. The temperature has been varied from 500 degrees C to 700 degrees C. The crystal structures and the electrical properties of the thin films have been observed to strongly depend on the deposition temperature by C-V measurement, scanning electron microscopy (SEM), and X-ray diffraction method (XRD).

引用

页码：68 / 73

页数：6