Semiconductor-based Photocatalytic Hydrogen Generation

被引:6945
作者
Chen, Xiaobo [1 ]
Shen, Shaohua [1 ,2 ]
Guo, Liejin [2 ]
Mao, Samuel S. [1 ]
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
[2] Xi An Jiao Tong Univ, State Key Lab Multiphase Flow Power Engn, Xian 710049, Shaanxi, Peoples R China
关键词
VISIBLE-LIGHT-DRIVEN; DOPED TITANIUM-DIOXIDE; TIO2 NANOTUBE ARRAYS; ONE-POT SYNTHESIS; (GA1-XZNX)(N1-XOX) SOLID-SOLUTION; INTERPARTICLE ELECTRON-TRANSFER; WATER-SPLITTING ACTIVITY; TEMPERATURE HYDROTHERMAL SYNTHESIS; SENSITIZED PT/TIO2 PHOTOCATALYST; COORDINATED D(10) CONFIGURATION;
D O I
10.1021/cr1001645
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A significant process has been achieved on semiconductor-based photocatalytic hydrogen generation through water splitting. The processes in the photocatalytic generation of hydrogen include light absorption of the semiconductor photocatalyst, generation of excited charges (electrons and holes), recombination of the excited charges, separation of excited charges, migration of the charges, trap of excited charges, and transfer of excited charges to water or other molecules. The total amount of hydrogen generated is mainly determined by the amount of excited electrons in the water/photocatalyst interface in reducing water. The reaction of photogenerated H2and O2 to form H2O on the photocatalyst surface is normally called 'surface backreaction (SBR)'. The separation of the photoactive sites necessary for hydrogen and oxygen evolution, and which is always accompanied by the surface separation of the photogenerated electrons and holes, has been shown to be greatly affected by the surface properties of the photocatalysts.
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页码:6503 / 6570
页数:68
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