Characterization of hydrogen plasma with a fiber optics catalytic probe

被引:21
作者
Cvelbar, U
Mozetic, M
Poberaj, I
Babib, D
Ricard, A
机构
[1] Jozef Stefan Inst, Plasma Lab F4, Ljubljana, Slovenia
[2] Univ Ljubljana, Dept Phys, Ljubljana, Slovenia
[3] Univ Toulouse 3, CPAT, F-31062 Toulouse, France
关键词
hydrogen plasma; plasma characterization; H density; catalytic probe; FOCP;
D O I
10.1016/j.tsf.2004.08.047
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The most important parameter in reactive hydrogen plasma is the density of neutral hydrogen atoms. The density can be measured by different means including a variety of optical emission and absorption spectroscopy methods, titration and catalytic probes. Recently, it was shown that catalytic probes have some advantages over the other methods. The main advantage is the ability for real time measurement of the atom density. A catalytic probe was used to measure the H density in an afterglow of a plasma reactor. Plasma was created in a mixture of argon and hydrogen. At a constant H-2 and Ar flow rates, the H density was found to increase with increasing power. At a low concentration of hydrogen in the gas mixture, saturation in the H density was observed. The lower the hydrogen concentration the lower the power at which the saturation was observed. At high hydrogen concentrations, no H saturation was observed. The results were explained with collision phenomena in ionized gases and heterogeneous recombination of H atoms on surfaces. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:12 / 16
页数:5
相关论文
共 28 条
[1]  
[Anonymous], 1986, STUD CONSERV, DOI DOI 10.2307/1505956
[2]   Fiber optic catalytic probe for weakly ionized oxygen plasma characterization [J].
Babic, D ;
Poberaj, I ;
Mozetic, M .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2001, 72 (11) :4110-4114
[3]   BEHAVIOR OF CATALYTIC PROBES AT LOW-PRESSURE [J].
BRECELJ, F ;
MOZETIC, M ;
ZUPAN, K ;
DROBNIC, M .
VACUUM, 1993, 44 (5-7) :459-460
[4]  
BRENNAN D, 1984, CHEM KINET, V21, P51
[5]  
CADZ I, 1993, Z PHYS D, V26, P328
[6]  
CUOMO J, 1991, APPL DIAMOND FILMS R
[7]   LOW-TEMPERATURE EPITAXIAL SILICON FILM GROWTH USING HIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE PLASMA DEPOSITION [J].
DEBOER, SJ ;
DALAL, VL ;
CHUMANOV, G ;
BARTELS, R .
APPLIED PHYSICS LETTERS, 1995, 66 (19) :2528-2530
[8]   HYDROGEN-ATOM CLEANING OF ARCHAEOLOGICAL ARTIFACTS [J].
DEGRAAF, MJ ;
SEVERENS, R ;
VANDESANDE, MJF ;
VANDESANDEN, MCM ;
SCHRAM, DC ;
MEIJERS, HJM ;
KARS, H .
JOURNAL OF NUCLEAR MATERIALS, 1993, 200 (03) :380-382
[9]   H-ATOM PLASMA DIAGNOSTICS - A SENSITIVE PROBE OF TEMPERATURE AND PURITY [J].
DUNLOP, JR ;
TSEREPI, AD ;
PREPPERNAU, BL ;
CERNY, TM ;
MILLER, TA .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1992, 12 (01) :89-101
[10]  
KAIWARA T, 1985, REV SCI INSTRUM, V56, P2213