Nanoscale polarization switching mechanisms in multiferroic BiFeO3 thin films

被引:31
作者
Bea, H. [1 ]
Ziegler, B. [1 ]
Bibes, M. [2 ,3 ]
Barthelemy, A. [2 ,3 ]
Paruch, P. [1 ]
机构
[1] Univ Geneva, DPMC, CH-1211 Geneva 4, Switzerland
[2] Unite Mixte Phys CNRS Thales, F-91767 Palaiseau, France
[3] Univ Paris 11, F-91405 Orsay, France
基金
瑞士国家科学基金会;
关键词
EXCHANGE BIAS; DOMAIN-WALLS;
D O I
10.1088/0953-8984/23/14/142201
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Ferroelectric switching in BiFeO3 multiferroic thin films was studied by piezoresponse force microscopy, as a function of the tip voltage and sweep direction, for samples with two different intrinsic domain structures. In all films, the switched polarization direction follows the in-plane and out-of-plane components of the highly inhomogeneous electric field applied by the microscope tip. In films with 'bubble-like' intrinsic domains, we observed in-plane switching assisted by out-of-plane switching for lower voltage values, and independent in-plane and out-of-plane switching for higher voltages, in both cases allowing full control of the ferroelectric polarization depending on the tip voltage polarity and sweep direction. In films with 'stripe-like' intrinsic domains, independent in-plane and out-of-plane switching was observed, but unswitched stripe domains prevented full control of the ferroelectric polarization over large areas. We correlate the observed switching behavior with the field-driven onset of a highly distorted tetragonal phase predicted by ab initio calculations, which leads to a very high in-plane susceptibility during the return to the non-distorted monoclinic phase when the field is decreased. Depending on the specific strain and disorder present in the sample, the transition towards the highly distorted phase may be asymmetrized, and easier to reach when an electric field opposite to the out-of-plane polarization direction is applied.
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页数:10
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