Structural evolution during annealing of thermally reduced graphene nanosheets for application in supercapacitors

被引:426
作者
Chen, Cheng-Meng [1 ,4 ]
Zhang, Qiang [2 ]
Yang, Mang-Guo [1 ,4 ]
Huang, Chun-Hsien [3 ]
Yang, Yong-Gang [1 ]
Wang, Mao-Zhang [1 ]
机构
[1] Chinese Acad Sci, Inst Coal Chem, Key Lab Carbon Mat, Taiyuan 030001, Peoples R China
[2] Tsinghua Univ, Dept Chem Engn, Beijing Key Lab Green Chem React Engn & Technol, Beijing 100084, Peoples R China
[3] Natl Tsing Hua Univ, Dept Biomed Engn & Environm Sci, Hsinchu 30013, Taiwan
[4] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
关键词
ELECTROCHEMICAL ENERGY-STORAGE; CHEMICAL SURFACE-PROPERTIES; LITHIUM-ION BATTERIES; GRAPHITE OXIDE; CARBON MATERIALS; ACTIVATED CARBON; FUNCTIONALIZED GRAPHENE; REDUCTION; CAPACITORS; SHEETS;
D O I
10.1016/j.carbon.2012.03.029
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The surface functional groups of thermally reduced graphene nanosheets (TRG) prepared by vacuum promoted thermal expansion of graphene oxide are tailored by progressive carbonization. The residual carbon ratios after annealing at various temperatures from 250 to 1000 degrees C increase progressively from 44.3 to 84.8%. The oxygen containing functional groups are intensively removed at higher annealing temperature. The thermally stable phenols, ethers, and carbonyls become the major components in 1000 degrees C annealed TRG. Though the starting material G250 owns a high specific capacitance of 170.5 F/g, the value decreases to only 47.5 F/g when the annealing temperature is increased to 1000 degrees C. The oxygen containing functional groups can enhance the capacitance performance of TRGs by introducing abundant pseudocapacitance active sites through reversible Faradic redox reactions. The correlation between the structural evolution and electrochemical performance of TRGs provides new insight for designing graphene based electrodes with controllable properties for advanced supercapacitors. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码:3572 / 3584
页数:13
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