New hydrogen distribution in a-Si:H: An NMR study

被引：91

作者：

Wu, Y ^{[1
]}

Stephen, JT ^{[1
]}

Han, DX ^{[1
]}

Rutland, JM ^{[1
]}

Crandall, RS ^{[1
]}

Mahan, AH ^{[1
]}

机构：

[1] NATL RENEWABLE ENERGY LAB,GOLDEN,CO 80401

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.77.2049

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Hot-filament-assisted CVD deposited a-Si:H with low H concentration and low defect density has been examined by H-1 NMR. It is demonstrated for the first time that H microstructures can be altered significantly in device quality a-Si:H films. In the present films, large H clusters account for 90% of the 2-3 at.% H atoms, with the remaining H more dispersed, but still aggregated in a small volume fraction of the material. These results suggest that an ideal a-Si:H network with low defect density and high structural stability may not necessarily be homogeneous.

引用

页码：2049 / 2052

页数：4

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