Weak localization in semiconductor structures with strong spin-orbit coupling

被引：21

作者：

Averkiev, NS ^{[1
]}

Golub, LE ^{[1
]}

Pikus, GE ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS | 1998年 / 86卷 / 04期

关键词：

D O I：

10.1134/1.558539

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A theory of weak localization is constructed for p-type semiconductor structures with a complex rs valence band. An equation for the Cooperon is obtained and solved in the case when spin relaxation cannot be treated as a perturbation. The anomalous magnetoresistance is calculated in bulk samples as a function of the external deformation and in quantum wells as a function of the doping level. The results of the theory are represented in a form that allows direct comparison with experiment. (C) 1998 American Institute of Physics.

引用

页码：780 / 789

页数：10

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[No title captured]

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