On the nature of metal-porous Si-single crystal silicon (MPS) diodes

被引：3

作者：

Molnár, K ^{[1
]}

Mohácsy, T ^{[1
]}

Abdulhadi, AH ^{[1
]}

Volk, J ^{[1
]}

Bársony, I ^{[1
]}

机构：

[1] Res Inst Tech Phys & Mat Sci MFA, H-1525 Budapest, Hungary

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2003年 / 197卷 / 02期

关键词：

D O I：

10.1002/pssa.200306542

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to provide a consistent explanation of the operation, the factors contributing to the current through an MPS diode were analysed in forward biasing on an n-type, mesoporous structure. The diodes having a degenerate n-doped ITO metallisation were characterised by recording the temperature dependent I-V characteristics in a vacuum cryostat in the temperature range of T = 100 K to 300 K. A systematic deconvolution of the obtained I-V curves, after stripping them from the contributions of ohmic conductance, resulted in a purely Fowler-Nordheim tunnelling behaviour. The present analysis in forward operation lead to very similar results as obtained formerly in the reverse biasing case [Molnar et al., J. Lumin. 80, 91 (1999)], except that no significant electroluminescence was observed here.

引用

页码：446 / 451

页数：6

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