Quantum oscillations of resistance and magnetization in the degenerate semiconductor n-HgCr2Se4

被引：4

作者：

Balaev, AD ^{[1
]}

Gavrichkov, VA

Ovchinnikov, SG

机构：

[1] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia

[2] Krasnoyarsk State Univ, Krasnoyarsk 660074, Russia

[3] Russian Acad Sci, NS Kurnakov Gen & Inorgan Chem Inst, Moscow 117907, Russia

来源：

JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS | 1998年 / 86卷 / 05期

关键词：

Magnetic Field; Elementary Particle; Quantum Field Theory; Field Strength; Magnetic Field Strength;

D O I：

10.1134/1.558549

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In the magnetic field range Delta H = 8-60 kOe we observed and studied the anomalous oscillations in the magnetic field dependence of the resistance and magnetization of single crystals of n-HgCr2Se4. The absence of periodicity in 1/H in the Delta H = 8-20 kOe range can be explained by the non-Fermi-liquid behavior of the electron subsystem and agrees with the theory of the de Haas-van Alphen in systems with intermediate valence. In stronger fields, Delta H = 20-60 kOe, the amplitude of the fundamental harmonic decreases, with the number and amplitude of the higher-order harmonics increasing, As a result, noise is superimposed on the signal as magnetic field strength grows. The temperature dependence of the magnetization is the sum of the monotonic spin-wave contribution and the oscillating part. (C) 1998 American Institute of Physics. [S1063-7761(98)02205-7].

引用

页码：1026 / 1029

页数：4