Fermi-level-dependent defect formation in Cu-chalcopyrite semiconductors

被引：79

作者：

Klein, A ^{[1
]}

Jaegermann, W ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Dept Mat Sci, D-64287 Darmstadt, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 16期

关键词：

D O I：

10.1063/1.123825

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Valence-band photoelectron spectroscopy of CuInSe2, CuInS2, and CuGaSe2 surfaces and interfaces give evidence for the formation of Cu vacancies when the Fermi level moves upwards in the band gap due to contact formation. The effect might be a key issue in understanding basic properties of solar cell devices based on these materials. (C) 1999 American Institute of Physics. [S0003-6951(99)00516-1].

引用

页码：2283 / 2285

页数：3

共 20 条

[1]

BUCHER K, 1997, P 14 EUR PHOT SOL EN, P272

[2] Prospects of wide-gap chalcopyrites for thin film photovoltaic modules [J].

Herberholz, R ;

Nadenau, V ;

Ruhle, U ;

Koble, C ;

Schock, HW ;

Dimmler, B .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 49 (1-4) :227-237

[3] THEORY OF THE BAND-GAP ANOMALY IN ABC2 CHALCOPYRITE SEMICONDUCTORS [J].

JAFFE, JE ;

ZUNGER, A .

PHYSICAL REVIEW B, 1984, 29 (04) :1882-1906

[4] Band lineup between CdS and ultra high vacuum-cleaved CuInS2 single crystals [J].

Klein, A ;

Loher, T ;

Tomm, Y ;

Pettenkofer, C ;

Jaegermann, W .

APPLIED PHYSICS LETTERS, 1997, 70 (10) :1299-1301

[5] Chemical interaction of Na with cleaved (011) surfaces of CuInSe2 [J].

Klein, A ;

Loher, T ;

Pettenkofer, C ;

Jaegermann, W .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (09) :5039-5043

[6] FORMATION AND ELECTRONIC-PROPERTIES OF THE CDS/CUINSE2(011) HETEROINTERFACE STUDIED BY SYNCHROTRON-INDUCED PHOTOEMISSION [J].

LOHER, T ;

JAEGERMANN, W ;

PETTENKOFER, C .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (02) :731-738

[7] Partial density of states in the CuInSe2 valence bands [J].

Loher, T ;

Klein, A ;

Pettenkofer, C ;

Jaegermann, W .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (12) :7806-7809

[8] Solar cells based on CuInSe2 and related compounds: Material and device properties and processing [J].

Nadenau, V ;

Braunger, D ;

Hariskos, D ;

Kaiser, M ;

Koble, C ;

Oberacker, A ;

Ruckh, M ;

Ruhle, U ;

Schaffler, R ;

Schmid, D ;

Walter, T ;

Zweigart, S ;

Schock, HW .

PROGRESS IN PHOTOVOLTAICS, 1995, 3 (06) :363-382

[9]

ROCKETT A, 1991, J APPL PHYS, V70, P81

[10] Determination of charge carrier collecting regions in chalcopyrite heterojunction solar cells by electron-beam-induced current measurements [J].

Scheer, R ;

Wilhelm, M ;

Lewerenz, HJ ;

Schock, HW ;

Stolt, L .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 49 (1-4) :299-309

← 1 2 →