Neutron detectors made from chemically vapour deposited semiconductors

被引：36

作者：

Foulon, F ^{[1
]}

Bergonzo, P ^{[1
]}

Brambilla, A ^{[1
]}

Jany, C ^{[1
]}

Guizard, B ^{[1
]}

Marshall, RD ^{[1
]}

机构：

[1] CEA Technol Avancees, LETI, DEIN, SPE, F-91191 Gif Sur Yvette, France

来源：

SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II | 1997年 / 487卷

关键词：

D O I：

10.1557/PROC-487-591

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present the results of investigations on the use of semiconductors deposited by chemical Vapour deposition (CVD) for the fabrication of neutron detectors. For this purpose, 20 mu m thick hydrogenated amorphous silicon (a-Si:H) pin diodes and 100 mu m thick polycrystalline diamond resistive detectors were fabricated. The detectors were coupled to a neutron-charged particle converter : a layer of either gadolinium or boron (isotope IO enriched) deposited by evaporation. We have demonstrated the capability of such neutron detectors to operate at neutron fluxes ranging from 10(1) to 10(6) neutrons/cm(2).s. The fabrication of large area detectors for neutron counting or cartography through the use of multichannel reading circuits is discussed. The advantages of these detectors include the ability to produce large area detectors at low cost, radiation hardness (similar to 4 Mrad for a-Si:H and similar to 100 Mrad for diamond), and for diamond, operation at temperatures up to 500 degrees C. These properties enable the use of these devices for neutron detection in harsh environments. Thermal neutron detection efficiency up to 22 % and 3 % are expected by coupling a-Si:H diodes and diamond detectors to 3 mu m thick gadolinium (isotope 157) and 2 mu m thick boron layers, respectively.

引用

页码：591 / 596

页数：6