Direct-write patterning of indium-tin-oxide film by high pulse repetition frequency femtosecond laser ablation

被引:79
作者
Choi, H. W.
Farson, D. F.
Bovatsek, J.
Arai, A.
Ashkenasi, D.
机构
[1] Ohio State Univ, Lab Multiscale Proc & Characterizat, Columbus, OH 43221 USA
[2] IMRA Amer Inc, Fremont, CA 94538 USA
[3] LMTB, D-12489 Berlin, Germany
关键词
D O I
10.1364/AO.46.005792
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Ablation of indium oxide doped with tin oxide (ITO) from glass substrates is described. Laser pulse energy and focus spot size were varied in single-pulse, single-spot ablation tests and for ablation of linear features with scanned multiple pulses. The single-pulse ablation threshold of ITO was smaller than that of the glass substrate so the entire thickness of ITO could be removed in a single pulse or with overlying multiple pulses without the possibility of substrate ablation. Linear features could be created at much higher scanning speeds using a high repetition frequency (100 kHz) Yb fiber amplified laser as compared to a lower repetition frequency (2 kHz) laser. An analysis showed that incubation effects lowered ITO ablation thresholds when pulse frequency was high relative to scanning speed, contributing to large feasible scanning speeds for high pulse frequency lasers. (c) 2007 Optical Society of America.
引用
收藏
页码:5792 / 5799
页数:8
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