Characterisation of molecular beam epitaxy-grown InGaAs multilayer structures using photoluminescence

被引：8

作者：

Srinivasan, T ^{[1
]}

Muralidharan, K ^{[1
]}

Mehta, SK ^{[1
]}

Jain, BP ^{[1
]}

Singh, SN ^{[1
]}

Jain, RK ^{[1
]}

Kumar, V ^{[1
]}

机构：

[1] Solid State Phys Lab, Delhi 110054, India

来源：

VACUUM | 2001年 / 60卷 / 04期

关键词：

photoluminescence; MBE growth; III-V compounds; indium segregation;

D O I：

10.1016/S0042-207X(00)00223-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Molecular beam epitaxy-grown InGaAs/GaAs multilayer structures were used to characterise for their indium composition, quantum well widths and energy levels in quantum wells employing low-temperature photoluminescence spectroscopy. The effect of surface segregation and thermal desorption of indium atoms in these structures which changes the intended square well and barrier profiles is demonstrated. These shape changes in the well and barrier must be taken into account to correctly predict the quantum well energy level positions and hence the indium composition and the quantum well width. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：425 / 429

页数：5

共 12 条

[1]

CHEN KJ, 1995, ELECTRON LETT, V31, P125

[2]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[3] A PHOTOLUMINESCENCE STUDY OF INDIUM DESORPTION FROM STRAINED GA1-XINXAS/GAAS [J].