Spin-dependent recombination of photoinduced carriers in phthalocyanine/C60 heterojunctions

被引:21
作者
Hiromitsu, I [1 ]
Kaimori, Y [1 ]
Kitano, M [1 ]
Ito, T [1 ]
机构
[1] Shimane Univ, Interdisciplinary Fac Sci & Engn, Dept Mat Sci, Matsue, Shimane 6908504, Japan
来源
PHYSICAL REVIEW B | 1999年 / 59卷 / 03期
关键词
D O I
10.1103/PhysRevB.59.2151
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Spin-dependent recombination of photoinduced carriers in H-2-phthalocyanine(H2Pc)/C-60 heterojunctions is studied by electrically detected electron-spin resonance (EDESR) spectroscopy. The EDESR spectrum of the H2Pc/C-60 consists of two components A and B, the g values of which are 2.0018+/-0.0002 and 2.0010+/-0.0002, respectively. The two components are attributed to exchange-coupled localized electron-hole pairs trapped at different types of recombination centers. Component A has spin-flip satellites due to an interaction between the electron (or hole) spin, and its surrounding nuclear spins of protons:which belong to the H2Pc rings. From the satellite intensity, the distance between the electron (or hole) and the protons is estimated to be 4.33+/-0.25 Angstrom, indicating that the localized pairs for the component A locate close to the H2Pc rings. The spin dynamics of the localized pairs for the component A is studied by a microwave recovery experiment, in which the time dependence of the EDESR signal intensity is measured after turning the resonant microwave on and off. A theoretical model of the spin-dependent recombination of the exchange-coupled election-hole pair is proposed with which the experimental results of the microwave recovery are explained. By theoretical analysis, it is found that R greater than or similar to 1 X 10(6) s(-1) and D + W-si = 6.2 (+/- 0.8) x 10(4) s(-1) for component A at room temperature, where R is the recombination rate of the localized pair in the S-z = 0 triplet sublevel, and D and W-si are the dissociation and the spin-lattice relaxation rates, respectively, of the pairs in the triplet sublevels. The photocurrent 12 that is caused by the dissociation of the localized pairs for component A is about 5% of the total photocurrent. [S0163-1829(99)02403-0].
引用
收藏
页码:2151 / 2163
页数:13
相关论文
共 21 条
[2]   SATURATION OF THE PARAMAGNETIC RESONANCE OF A V-CENTER [J].
CASTNER, TG .
PHYSICAL REVIEW, 1959, 115 (06) :1506-1515
[3]   Evidence for triplet interchain polaron pairs and their transformations in polyphenylenevinylene [J].
Dyakonov, V ;
Rosler, G ;
Schwoerer, M ;
Frankevich, EL .
PHYSICAL REVIEW B, 1997, 56 (07) :3852-3862
[4]   ELECTRON-SPIN-RESONANCE IN PPV-PHOTODIODES - DETECTION VIA PHOTOINDUCED CURRENT [J].
DYAKONOV, V ;
GAUSS, N ;
ROSLER, G ;
KARG, S ;
RIESS, W .
CHEMICAL PHYSICS, 1994, 189 (03) :687-695
[5]   ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .1. ELECTRONIC STRUCTURE OF DONORS BY THE ELECTRON NUCLEAR DOUBLE RESONANCE TECHNIQUE [J].
FEHER, G .
PHYSICAL REVIEW, 1959, 114 (05) :1219-1244
[6]   Optically detected magnetic resonance study of efficient two-layer conjugated polymer light-emitting diodes [J].
Greenham, NC ;
Shinar, J ;
Partee, J ;
Lane, PA ;
Amir, O ;
Lu, F ;
Friend, RH .
PHYSICAL REVIEW B, 1996, 53 (20) :13528-13533
[7]   Photovoltaic effect and electrically detected electron spin resonance of a H-2-phthalocyanine/C-60 heterojunction [J].
Hiromitsu, I ;
Kaimori, Y ;
Ito, T .
SOLID STATE COMMUNICATIONS, 1997, 104 (09) :511-515
[8]  
JEROME D, 1964, PHYS REV, V134, P1001
[9]   SPIN DEPENDENT SURFACE RECOMBINATION IN SILICON P-N-JUNCTIONS - THE EFFECT OF IRRADIATION [J].
KAPLAN, D ;
PEPPER, M .
SOLID STATE COMMUNICATIONS, 1980, 34 (10) :803-805
[10]   SPIN-DEPENDENT RECOMBINATION ON SILICON SURFACE [J].
LEPINE, DJ .
PHYSICAL REVIEW B, 1972, 6 (02) :436-&