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GaAs/AlGaAs traveling wave electro-optic modulators
被引：7
作者：
Spickermann, R
Sakamoto, SR
Dagli, N
机构：
来源：
OPTOELECTRONIC INTEGRATED CIRCUITS
|
1997年
/
3006卷
关键词：
traveling wave modulator;
optical modulator;
Mach-Zehnder modulator;
GaAs modulator;
D O I：
10.1117/12.264228
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
A GaAs/AlGaAs traveling wave Mach-Zehnder electro-optic modulator with novel slow wave electrodes was fabricated on undoped epitaxial layers. Using appropriate electrode engineering velocity matching with matched impedance and low microwave loss was achieved. Device had a measured electrical bandwidth greater than 40 GHz at 1.55 mu m. The measured bandwidth at 1.3 inn was 37 GHz. The mechanism limiting the bandwidth was identified as phase velocity matching rather than group velocity matching.
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页码：272 / 279
页数：8
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