Low-power gas sensors based on work-function measurement in low-cost hybrid flip-chip technology

被引:24
作者
Fleischer, M
Ostrick, B
Pohle, R
Simon, E
Meixner, H
Bilger, C
Daeche, F
机构
[1] Siemens AG, Corp Technol, D-81739 Munich, Germany
[2] TYCO Elect, D-81359 Munich, Germany
关键词
gas sensor; SGFET; work-function measurement; flip-chip technology; low-power;
D O I
10.1016/S0924-4247(01)00674-4
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
To implement low-power gas sensors with low component costs, the principle of work-function read out via a hybrid suspended gate FET (SGFET) is being pursued, whereby a freely selectable sensor film undergoes a reversible work-function change corresponding to the buildup of a potential difference on the surface in response to gas adsorption/reaction. This is read out via an ISFET structure. An innovative design which allows cheap manufacturing will be described for the principle that has already been successfully demonstrated. The starting point of the design is a ceramic Al2O3 substrate coated with conductor patterns and sensitive materials onto which the FET is mounted in flip-chip technology. By means of the freely selectable sensor film and its preparation method, a wide range of applications can be opened up. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:169 / 173
页数:5
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