Radiation effects in silicon carbide: High energy cascades and damage accumulation at high temperature

We discuss results of molecular dynamics computer simulation studies of 3 keV and 5 keV displacement cascades in beta-SiC, as well as damage accumulation under conditions similar to those in Inertial Fusion environments. The simulations are performed with the Tersoff potential. The cascade lifetime in SiC is found to be extremely short. This, combined with the high melting temperature of SIC, precludes direct lattice amorphization during the cascade. Although large disordered regions result, these retain their basic crystalline structure. The SiC results also show anisotropy in the number of Si and C recoils as well as in the number of replacements in each sublattice. Details of the damage configurations and of the accumulation dynamics obtained will be discussed.