Indium tin oxide films made from nanoparticles:: models for the optical and electrical properties

被引:110
作者
Ederth, J [1 ]
Heszler, P [1 ]
Hultåker, A [1 ]
Niklasson, GA [1 ]
Granqvist, CG [1 ]
机构
[1] Uppsala Univ, Dept Mat Sci, Angstrom Lab, SE-75121 Uppsala, Sweden
关键词
indium tin oxide; nanostructures; optical properties; resistivity;
D O I
10.1016/S0040-6090(03)01164-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Porous thin films comprising nanoparticles of In2O3:Sn (known as indium tin oxide, ITO) were made by spin coating followed by annealing. The nanoparticles were prepared by a wet chemical technique. The films had a luminous transmittance of similar to90% and an electrical resistivity of similar to10(-2) Omega cm. Spectral transmittance and reflectance were analyzed by first representing the ITO nanoparticles within the Drude theory, with a frequency-dependent scattering time characteristic for ionized impurity scattering, and then applying effective medium theory to account for the porosity. It was found that the individual nanoparticles had a resistivity of similar to2 x 10(-4) Omega cm, i.e. their electrical properties were comparable to those in the best films made by physical or chemical vapour deposition. Temperature-dependent electrical resistivity data for the films could be reconciled with a model for fluctuation induced tunneling between micrometer-size clusters of internally connected ITO nanoparticles. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:199 / 206
页数:8
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