1200V trench gate NPT-IGBT(IEGT) with excellent low on-state voltage

被引：14

作者：

Takeda, T ^{[1
]}

Kuwahara, M ^{[1
]}

Kamata, S ^{[1
]}

Tsunoda, T ^{[1
]}

Imamura, K ^{[1
]}

Nakao, S ^{[1
]}

机构：

[1] Toshiba Corp, Ctr Microelect, Saiwai Ku, Kawasaki, Kanagawa 210, Japan

来源：

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 1998年

关键词：

D O I：

10.1109/ISPSD.1998.702636

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A New 1200V-rating trench gate NPT(Non Punch Though)IGBT(Insulated Gate Bipolar Transistor) and -IEGT(Injection Enhancement Gate Transistor) have been developed. Some works for the IE(carrier Injection Enhancement) effect related to relatively high voltage devices were reported [1,2,3,4]. This time, the IE-effect was employed in 1200V-rating trench gate NPT-IGBT for the first time. The IE-effect was adopted mainly by making some p-base regions not contacted to the emitter electrode. By numerical simulation, it is found that the IE-effect is effective in reducing on-state voltage for 1200V-rating NPT-IGBT. On the basis of these investigations, a 150A-rating IGBT chip was fabricated. The on-state voltage for this new device has resulted in as low as 1.8V at 85A/cm(2) without sacrificing its ruggedness to withstand destruction and its margin for blocking voltage.

引用

页码：75 / 79

页数：5