Movpe growth of GaNAs using tertiarybutylarsine (TBA) and dimethylhydrazine (DMHy)
被引:4
作者:
Moto, A
论文数: 0引用数: 0
h-index: 0
机构:
Sumitomo Elect Ind Ltd, Basic High Technol Labs, Itami, Hyogo 664, JapanSumitomo Elect Ind Ltd, Basic High Technol Labs, Itami, Hyogo 664, Japan
Moto, A
[1
]
Tanaka, S
论文数: 0引用数: 0
h-index: 0
机构:
Sumitomo Elect Ind Ltd, Basic High Technol Labs, Itami, Hyogo 664, JapanSumitomo Elect Ind Ltd, Basic High Technol Labs, Itami, Hyogo 664, Japan
Tanaka, S
[1
]
Ikoma, N
论文数: 0引用数: 0
h-index: 0
机构:
Sumitomo Elect Ind Ltd, Basic High Technol Labs, Itami, Hyogo 664, JapanSumitomo Elect Ind Ltd, Basic High Technol Labs, Itami, Hyogo 664, Japan
Ikoma, N
[1
]
Tanabe, T
论文数: 0引用数: 0
h-index: 0
机构:
Sumitomo Elect Ind Ltd, Basic High Technol Labs, Itami, Hyogo 664, JapanSumitomo Elect Ind Ltd, Basic High Technol Labs, Itami, Hyogo 664, Japan
Tanabe, T
[1
]
机构:
[1] Sumitomo Elect Ind Ltd, Basic High Technol Labs, Itami, Hyogo 664, Japan
来源:
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS
|
1998年
关键词:
D O I:
10.1109/ICIPRM.1998.712421
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
GaNAs alloys were successfully grown on GaAs substrates by low-pressure MOVPE with all organometalic sources of triethylgallium (TEG), tertiarybutylarsine (TBA), and dimethylhydrazine(DMHy). We studied the incorporation behavior of nitrogen in terms of growth temperature and molar flow ratio of supplied sources. The ratio of TEA to the group III element, As/III, as low as 1.4 was found to be possible to grow GaNAs with good crystalline quality. Since the nitrogen concentration more than 3% was easily achieved by our growth technique, the combination of TBA-DMHy as V precursors is a candidate for the growth of other III-V alloys containing nitrogen. We observed decrease in PL intensity with enhancing nitrogen incorporation into solids: lowering growth temperature and increasing fractional flow ratio of DMHy. In order to recover from degradation in optical properties, Rapid Thermal Annealing (RTA) was demonstrated and found to be effective. Therefore MOVPE using TBA-DMHy combined with post-annealing is expected to obtain GaNAs alloys with high nitrogen concentration as well as excellent optical properties.