Thermoelectric properties of InSb and Ga0.03In0.97Sb thin films grown by metalorganic vapor-phase epitaxy

被引：15

作者：

Yamaguchi, S ^{[1
]}

Nagawa, Y

Kaiwa, N

Yamamoto, A

机构：

[1] Kanagawa Univ, Dept Elect Elect & Informat Engn, Kanagawa Ku, 3-27-1 Rokkakubashi, Yokohama, Kanagawa 2218686, Japan

[2] Natl Inst Adv Ind Sci & Technol, Energy Technol Res Inst, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 15期

关键词：

D O I：

10.1063/1.1901813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the thermoelectric properties of InSb. and Ga0.03In0.97Sb thin films grown by metalorganic vapor-phase epitaxy targeting a thermoelectric device with a high electron mobility. For InSb on sapphire, the maximum power factor (P-f) was 3.5 X 10(-3) W / mK at 723 K, and for InSb on SiO2 glass, the maximum P-f was 2.4 X 10(-3) W / mK at 723 K. For Ga0.03In0.97Sb on sapphire, the maximum P-f was 2.5 X 10(-3) W/mK at 723 K, and for Ga0.03In0.97Sb on SiO2 glass, the maximum P-f was 3.4 X 10(-3) W/mK at 723 K. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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