Laser bending of etched silicon microstructures

被引：23

作者：

Gärtner, E

Frühauf, J ^{[1
]}

Löschner, U

Exner, H

机构：

[1] Tech Univ Chemnitz, Dept Elect Engn & Informat Technol, D-09107 Chemnitz, Germany

[2] Univ Appl Sci, Hsch Mittweida, Laserinst Mittelsachsen EV, D-09648 Mittweida, Germany

来源：

MICROSYSTEM TECHNOLOGIES | 2001年 / 7卷 / 01期

关键词：

Silicon; Microstructure; Laser Beam; Thermal Stress; Laser Scan;

D O I：

10.1007/s005420000065

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The process of contactless laser bending using the laser induced thermal stresses that up to this moment is performed with steels and other metal alloys is firstly applied to silicon microstructural elements. One-side-fastened Si beams prepared by anisotropic wet etching were locally heated by a Nd:YAG laser. The beams were bent without additional tools towards the incident laser beam. Bending angles up to 90 degrees are realizable. The degree of bending is strongly dependent on the used laser parameters, the position of heating and the number and distance of the laser scans.

引用

页码：23 / 26

页数：4