Fabrication of polymer Langmuir-Blodgett films containing regioregular poly(3-hexylthiophene) for application to field-effect transistor

被引：54

作者：

Matsui, J ^{[1
]}

Yoshida, S ^{[1
]}

Mikayama, T ^{[1
]}

Aoki, A ^{[1
]}

Miyashita, T ^{[1
]}

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

LANGMUIR | 2005年 / 21卷 / 12期

关键词：

D O I：

10.1021/la046922n

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

\Semiconducting thin films consisting of regioregular poly(3-hexylthiophene) (RR-PHT) and poly(N-dodecylacrylamide) (pDDA) were constructed by the Langmuir-Blodgett (LB) technique. A mixture of RR-PHT and pDDA spread from a chloroform solution on a water surface forms a stable monolayer, which can be transferred onto solid substrates by the LB method, yielding a well-defined polymer LB film. Surface morphology studies of the LB film indicate that the RR-PHT is dispersed uniformly throughout the surface. The polymer thin film was chemically doped by contacting with FeCl3 acetonitrile solution, and a conductivity of 5.6 S/cm was achieved. Further, the LB film was utilized as the semiconducting film in the field-effect transistor (FET), and mobilities of 2.2 x 10(-4) and 4.4 x 10(-4) cm(2) V-1 s(-1) were obtained by analyzing the saturated and linear regions of the current-voltage characteristic, respectively.

引用

页码：5343 / 5348

页数：6

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